Modification of Ag8SnS6 Photoanodes with Incorporation of Zn Ions for Photo-Driven Hydrogen Production

In this study, Zn ions were incorporated into Ag8SnS6 thin films on glass and indium–tin–oxide-coated substrates using chemical bath deposition. Detailed procedures for the growth of Ag–Zn–Sn–S semiconductor their optical, physical photoelectrochemical performances investigated. X-ray diffraction patterns samples revealed that kesterite Ag2ZnSnS4 phase with a certain amount can be obtained ethylenediaminetetraacetic acid disodium salt trisodium citrate as chelating agent couples. Images field-emission scanning electron microscope showed plate-like microstructures some spherical aggregates observed sample at low content. It changed to irregular grains [Zn]/[Sn] ratios being higher than 0.95 in samples. The energy band gaps range 1.57–2.61 eV, depending molar ratio sample. From Hall measurements, carrier concentrations mobilities ranges 6.57 × 1012–1.76 1014 cm−3 7.14–39.22 cm2/V·s, respectively. All n-type semiconductors. maximum performance was 1.38 mA/cm2 aqueous 0.25 M K2SO3 0.35 Na2S solutions.